71598ha (kt)/3257at/8253ki, ts (koto) no.1047-1/4 sanyo electric co.,ltd. semiconductor bussiness headquaters tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan pnp/npn epitaxial planar silicon transistors high-v ebo , af amp applications ordering number:en1047b 2sa1246/2SC3114 ( ) : 2sa1246 specifications absolute maximum ratings at ta = 25?c electrical characteristics at ta = 25?c package dimensions unit:mm 2003a [2sa1246/2SC3114] features high v ebo . wide aso and highly resistant to breakdown. r e t e m a r a pl o b m y ss n o i t i d n o cs g n i t a rt i n u e g a t l o v e s a b - o t - r o t c e l l o cv o b c 0 6 ) C (v e g a t l o v r e t t i m e - o t - r o t c e l l o cv o e c 0 5 ) C (v e g a t l o v e s a b - o t - r e t t i m ev o b e 5 1 ) C (v t n e r r u c r o t c e l l o ci c 0 5 1 ) C (a m ) e s l u p ( t n e r r u c r o t c e l l o ci p c 0 0 3 ) C (a m n o i t a p i s s i d r o t c e l l o cp c 0 0 4w m e r u t a r e p m e t n o i t c n u jj t 0 5 1 e r u t a r e p m e t e g a r o t sg t s t 0 5 1 + o t 5 5 C ?c ?c r e t e m a r a pl o b m y ss n o i t i d n o c s g n i t a r t i n u n i mp y tx a m t n e r r u c f f o t u c r o t c e l l o ci o b c v b c i , v 0 4 ) C ( = e 0 =1 . 0 ) C (a t n e r r u c f f o t u c r e t t i m ei o b e v b e i , v 0 1 ) C ( = c 0 =1 . 0 ) C (a n i a g t n e r r u c c dh e f v e c i , v 6 ) C ( = c a m 1 ) C ( =* 0 0 1* 0 6 5 t c u d o r p h t d i w d n a b - n i a gf t v e c i , v 6 ) C ( = c a m 1 ) C ( =0 0 1z h m e c n a t i c a p a c t u p t u o e s a b n o m m o cc b o v b c z h m 1 = f , v 6 ) C ( =0 . 3 ) 2 . 4 (f p e g a t l o v n o i t a r u t a s r e t t i m e - o t - r o t c e l l o cv ) t a s ( e c i c i , a m 0 5 ) C ( = b a m 5 ) C ( =5 . 0 ) C (v e g a t l o v n w o d k a e r b e s a b - o t - r o t c e l l o cv o b c ) r b ( i c i , a 0 1 ) C ( = e 0 =0 6 ) C (v e g a t l o v n w o d k a e r b r e t t i m e - o t - r o t c e l l o cv o e c ) r b ( i c r , a m 1 ) C ( = e b = 0 5 ) C (v e g a t l o v n w o d k a e r b e s a b - o t - r e t t i m ev o b e ) r b ( i e i , a 0 1 ) C ( = c 0 =5 1 ) C (v * : the 2sa1246/2SC3114 are classified as follows according to h fe at 1ma. 0 0 2 r 0 0 10 8 2 s 0 4 10 0 4 t 0 0 20 6 5 u 0 8 2 jedec:to-92 eiaj:sc-43 sanyo:np b:base c:collector e:emitter
no.1047-2/4 2sa1246/2SC3114
no.1047-3/4 2sa1246/2SC3114
ps no.1047-4/4 no products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. anyone purchasing any products described or contained herein for an above-mentioned use shall: accept full responsibility and indemnify and defend sanyo electric co., ltd., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on sanyo electric co., ltd., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of july, 1998. specifications and information herein are subject to change without notice. 2sa1246/2SC3114
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